| 摘要 |
A method for forming a tiered nanotube structure is provided to reduce electrical and thermal interfacial resistances in both respective nanotubes and bulk nanotubes and the related devices. A method for forming a tiered nanotube structure(112) includes the steps of: forming a wetting layer(102) on nanotubes(100); forming a schottky layer(104) on the wetting layer; forming a barrier layer(106) on the schottky layer; and forming a matrix layer(110) on the barrier layer. The wetting layer reduces a tunneling barrier between the nanotubes and the matrix layer, and the wetting layer formation step includes a step of forming at least one of amorphous carbon, graphitic carbon, activated carbon, palladium, nickel, and tungsten. |
