| 发明名称 |
ULTRAMICRO DIODE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ultramicro diode that has mesa structure in micron size. <P>SOLUTION: The ultramicro diode is formed by arranging semiconductor elements with double-wall layer and submicron size like an island on a conductive semiconductor substrate. It is provided with wiring projecting from the island-like element, and the element is connected with an upper electrode through the wiring. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2008226918(A) |
申请公布日期 |
2008.09.25 |
| 申请号 |
JP20070059015 |
申请日期 |
2007.03.08 |
| 申请人 |
NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
NODA TAKESHI;MITSUISHI KAZUKI;MANO TAKAAKI;OGUCHI NOBUYUKI |
| 分类号 |
H01L29/88;H01L21/28;H01L21/285;H01L29/06;H01L29/66;H01L33/06;H01L33/30;H01L33/44 |
主分类号 |
H01L29/88 |
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