| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic sensor for reducing variations of resistance values and lowering an offset voltage and provided its manufacturing method. SOLUTION: The thin film magnetic sensor is provided with first and second resistance bridge circuits. The first resistance bridge circuit is formed through the use of a photomask having a prescribed pattern and includes at least first and second magnetoresistive elements. The second resistance bridge circuit is formed through the use of the photomask, includes at least third and fourth magnetoresistive elements corresponding to the first and second magnetoresistive elements, and corresponds to the first resistance bridge circuit. In the manufacturing method of the thin film magnetic sensor, the thin film magnetic sensor is constituted by layering the first and second resistance bridge circuits, the first and fourth magnetoresistive elements are combined to form a first combined magnetoresistive element, and the second and third magnetoresistive elements are combined to form a second combined magnetoresistive element. COPYRIGHT: (C)2008,JPO&INPIT
|
