发明名称 |
Amplification Type Solid State Imaging Device |
摘要 |
An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10 a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
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申请公布号 |
US2008231733(A1) |
申请公布日期 |
2008.09.25 |
申请号 |
US20050568565 |
申请日期 |
2005.07.27 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FUJIOKA TAKASHI;MASUYAMA MASAYUKI;INAGAKI MAKOTO |
分类号 |
H01L27/14;H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N5/3745 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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