发明名称 Amplification Type Solid State Imaging Device
摘要 An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10 a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
申请公布号 US2008231733(A1) 申请公布日期 2008.09.25
申请号 US20050568565 申请日期 2005.07.27
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 FUJIOKA TAKASHI;MASUYAMA MASAYUKI;INAGAKI MAKOTO
分类号 H01L27/14;H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N5/3745 主分类号 H01L27/14
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