发明名称 Semiconductor apparatus having lateral type MIS transistor
摘要 A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.
申请公布号 US2008230834(A1) 申请公布日期 2008.09.25
申请号 US20080071411 申请日期 2008.02.21
申请人 DENSO CORPORATION 发明人 AKAGI NOZOMU;TAKAHASHI SHIGEKI;NAKANO TAKASHI;HIGUCHI YASUSHI;FUJII TETSUO;HATTORI YOSHIYUKI;KUWAHARA MAKOTO
分类号 H01L27/06 主分类号 H01L27/06
代理机构 代理人
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