发明名称 SOLID-STATE IMAGE CAPTURING DEVICE, METHOD FOR THE SAME AND ELECTRONIC INFORMATION DEVICE
摘要 A solid-state image capturing device, a method for the same and an electronic information device are prevent deterioration of image quality caused by stress of multi-layers by forming a plurality of light waveguide channels of the same material as more than one among a plurality of conductive layers. A solid-state image capturing device comprises a semiconductor substrate(1), a plurality of conductive layers(3), and a plurality of light waveguide channels(10a~10f). The semiconductor substrate has a number of light collecting portions(2) on the surface thereof two-dimensionally. The conductive layers are formed on a region except for an upper region of the light collecting portion. The light waveguide channels are formed on the light collecting portion as light waveguides. The light waveguide channels are formed of the same material as more than one of the conductive layers.
申请公布号 KR20080086414(A) 申请公布日期 2008.09.25
申请号 KR20080026623 申请日期 2008.03.21
申请人 SHARP KABUSHIKI KAISHA 发明人 ISHIBE SHOUICHI
分类号 H01L27/146;H01L27/14;H04N5/335;H04N5/357;H04N5/369;H04N5/374 主分类号 H01L27/146
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