| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier module capable of more improving high-frequency characteristics. <P>SOLUTION: In a high-frequency power amplifier module wherein a semiconductor chip including multiple amplification stage transistors is installed on a wiring board, an angle formed with a first auxiliary line connecting bonding portions at both ends of an input bonding wire 105 connecting a gate electrode (input electrode for bonding) 102a corresponding to a certain single first-stage transistor (amplification stage transistor) 102 and a wiring board 113 and a second auxiliary line connecting bonding portions at both ends of an output bonding wire 108 connecting a drain electrode (output electrode for bonding) 103b corresponding to a second-stage transistor (amplification stage transistor) 103 positioned on the stage next to the single amplification stage transistor and the wiring board 113 is set to 72° to 180°, and an interval between the bonding portions of the gate electrode (input electrode for bonding) 102a and the drain electrode (output electrode for bonding) 103b is set to 0.3 mm or more. <P>COPYRIGHT: (C)2008,JPO&INPIT |
