| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based LED element having a structure where light absorption by a pad electrode can be reduced. <P>SOLUTION: The GaN-based semiconductor element is provided with a substrate and a semiconductor laminated body formed of a plurality of GaN-based semiconductor layers formed on the substrate. An n-type layer, a light emitting layer and a p-type layer are included in the semiconductor laminated body in this order from a side nearest to the substrate. A positive electrode is constituted of a translucent electrode layer composed of a conductive oxide and a metallic positive pad electrode. The translucent electrode layer has a low sheet resistance part and a high sheet resistance part having sheet resistance higher than the low sheet resistance part. When the layer is plane-viewed, the low sheet resistance part and a negative electrode are separated across the high sheet resistance part. The low sheet resistance part has a current diffusion part which is not covered with the positive pad electrode. <P>COPYRIGHT: (C)2008,JPO&INPIT |
