| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To relax an electric field intensity generated in Schottky contact in application of a reverse bias voltage and to reduce a leakage current. <P>SOLUTION: A Schottky barrier semiconductor device has a structure in which a first groove 3 is formed on a low-concentration N-type semiconductor layer 2, a conductive polysilicon 6 is injected to the inside of the first groove 3 via a first oxide film 5, the opening of the first groove 3 is sealed with a second oxide film 7 and one surface of the semiconductor device 10 is covered with a Schottky metal 9. With this configuration, negative charges are induced on the main surface of the conductive polysilicon 6 opposite to the Schottky metal 9 in the application of a reverse bias voltage, and positive charges are induced on the low-concentration N-type semiconductor layer 2, and thus, the density of the negative charges to be induced on a Schottky interface due to a distance between the main surface of the conductive polysilicon 6 and the Schottky interface is reduced to suppress the leakage current. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
