| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To stably supply a write voltage to source lines by reducing disturbance in data writing in a nonvolatile semiconductor memory device storing the data in accordance with an accumulated amount of electric charge of memory cells. <P>SOLUTION: The data is written by driving the source lines (SL0, SL1) successively to be selected and transmitting writing data to a corresponding bit line. The number of source lines driven to be selected in one data write cycle is reduced, and the write voltage is stably supplied to the source lines. Also, in a selection row, the data is written only to the memory cell corresponding to the selected source line, therefore, the disturbance to the unselected memory cell column can be reduced. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
