| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that in a conventional semiconductor laser structure, when the reflection factor of a resonator end face is high, it is difficult to realize high COD optical output. SOLUTION: A semiconductor laser device is constituted so that a reflective multilayer film is formed in at least the one end face of a resonator end face, wherein the optical path length of the each layer is (2m-1)×λ/4 (λ: oscillation wavelength, m: positive integer number), and a high refractive index layer and a low refractive index layer are laminated alternately in the sequence from a first layer contacting semiconductor. COPYRIGHT: (C)2008,JPO&INPIT
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