| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can prevent an increase in connection resistance in a metal pad for connecting a capacity plug and a bottom electrode of a storage capacitor due to deterioration in shape of the pad and can solve a problem of having difficulty securing capacity which is attributable to a reduction in thickness or shoulder collapse of a cylinder interlayer insulation film for forming a cylinder capacitor on the pad, and which includes a pad electrode formation process. SOLUTION: In this manufacturing method, a multilayer structure of a silicon nitride film 21 and a silicon oxide film 22 is used as a hard mask layer for the metal pad. Then, the metal pad is so etched as to leave the silicon nitride film 21 while removing the silicon oxide film 22 of the hard mask layer. COPYRIGHT: (C)2008,JPO&INPIT
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