SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing on-resistance, and to provide its manufacturing method. SOLUTION: An IGBT 91 includes: a substrate S; an emitter electrode 17 formed on the upper surface Sa of the substrate S; a collector electrode 15 formed on the lower surface Sb of the substrate S; and control mechanisms (a p-type base region 7, an n+impurity region 11, an insulating film 13, and a gate electrode 19) each controlling an electric current flowing between the emitter electrode 17 and the collector electrode 15. An n-drift region 1 is formed in the substrate S. COPYRIGHT: (C)2008,JPO&INPIT