| 摘要 |
A semiconductor device having an active element and an MIM capacitor and a structure capable of reducing the number of the manufacturing steps thereof and a manufacturing method therefor are provided. The semiconductor device has a structure that the active element having an ohmic electrode and the MIM capacitor having a dielectric layer arranged between a lower electrode and an upper electrode are formed on a semiconductor substrate, wherein the lower electrode and ohmic electrode have the same structure. In an MMIC 100 in which an FET as an active element and the MIM capacitor are formed on a GaAs substrate 10 , for example, a source electrode 16 a and a drain electrode 16 b, which are ohmic electrodes of the FET, are manufactured simultaneously with a lower electrode 16 c of the MIM capacitor. Here the electrodes are formed with the same metal.
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