| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a film well on a resin layer by applying sputtering. <P>SOLUTION: A semiconductor substrate 10 on which an integrated circuit 12 is formed and an electrode 14 is connected electrically with the integrated circuit 12 is prepared. A resin layer 18 is formed on the semiconductor substrate 10. An interconnect 20 is formed on the resin layer 18 from above the electrode 14 to be connected electrically therewith. The step for forming the interconnect 20 includes the formation of a first film 24 by sputtering at a temperature of 100°C or below, and formation of a second film 26 by sputtering at a temperature of 200°C or above following to formation of the first film 24. <P>COPYRIGHT: (C)2008,JPO&INPIT |
