| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide technology for improving moisture resistance of a semiconductor device. <P>SOLUTION: In a GaAs substrate 40 being a semi-insulating substrate, HBT30 is formed in an element forming region, and element separating regions 47 are formed in insulating regions. The element separating regions 47 formed in the insulating regions are formed by introducing helium in semiconductor layers which are the same layers as a semiconductor layer 41 for sub-collector and a semiconductor layer 42 for collector in HBT 30. In an outer peripheral region, a conductive layer 49 is formed so that it is exposed from protection films 52 and 55, and the conductive layer 49 is connected to a back electrode. Since GND potential is supplied to the back electrode, the conductive layer 49 is fixed to GND potential. The conductive layer 49 is formed by semiconductor layers which are the same as the semiconductor layer 41 for sub-collector and the semiconductor layer 42 for collector in HBT 30. <P>COPYRIGHT: (C)2008,JPO&INPIT |
