发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To reduce a leak current, during a standby mode, of a flip-flop circuit, a latch circuit, etc. <P>SOLUTION: A flip-flop circuit 20 comprises a master latch circuit 1, a slave latch circuit 3, a clamp section 3, and a clock buffer circuit 4. The clamp section 3 is provided between a node N3 and a low potential side power source (ground potential) Vss and is constituted of an Nch MOS transistor NMT1 and a gate-grounded Nch MOS transistor NMT2. While the flip-flop circuit 20 is on standby, a standby signal STB of "Low" level is input to the gate of the Nch MOS transistor NMT1 in the clamp section 3, the Nch MOS transistor NMT1 is turned "OFF", the voltage of the node N3 is pulled up by a forward voltage (Vf) of the gate-grounded Nch MOS transistor NMT2, and the voltage of "Vdd-Vf" is applied to the master latch circuit 1. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008228192(A) 申请公布日期 2008.09.25
申请号 JP20070067057 申请日期 2007.03.15
申请人 TOSHIBA CORP;TOSHIBA LSI SYSTEM SUPPORT KK 发明人 INOUE MASANORI;HARASUMI ASUKA
分类号 H03K19/096;H03K3/3562 主分类号 H03K19/096
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