| 摘要 |
An apparatus for manufacturing a high purity polycrystalline silicon is characterized by comprising: a vaporizer 8 of silicon chloride; a fusing evaporator 5 of zinc; a vertical reactor 1 provided with a heating means on the peripheral face thereof; a silicon chloride gas supply nozzle 2 disposed to connect the vaporizer 8 of silicon chloride and the vertical reactor 1 and for supplying a silicon chloride gas supplied from the vaporizer 8 of silicon chloride into the vertical reactor 1 ; a zinc gas supply nozzle 3 disposed to connect the fusing evaporator 5 of zinc and the vertical reactor 1 and for supplying a zinc gas supplied from the fusing evaporator 5 of zinc into the vertical reactor 1 ; and an exhaust gas vent pipe 4 connected to the vertical reactor 1 , the fusing evaporator 5 of zinc, further comprising: a zinc evaporator 24 ; a main vertical cylinder part 28 connected to the upper part of the zinc evaporator 24 ; a solid trapping pipe 32 inserted into the main vertical cylinder part 28 ; a zinc introducing pipe 36 connected to the solid trapping pipe 32 at an angle; a seal pot 34 disposed to surround the lower end opening portion of the solid trapping pipe 32 and for configuring the bottom face of the solid trapping pipe 32 ; an induction heater 45 disposed on the peripheral face of the main vertical cylinder part 28 and capable of controlling a temperature; and a gas vent pipe 40 connected to the side wall of the zinc evaporator 24.
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