发明名称 METHODS FOR FORMING SINGLE DIES WITH MULTI-LAYER INTERCONNECT STRUCTURES AND STRUCTURES FORMED THEREFROM
摘要 A method for forming a single die includes forming at least one first active device over a first substrate and at least one first metallic layer coupled to the first active device. At least one second metallic layer is formed over a second substrate, wherein the second substrate does not include any active device The at least one fist metallic layer is bonded with the at least one second metallic layer such that the first substrate and the second substrate constitute a single die.
申请公布号 US2008233710(A1) 申请公布日期 2008.09.25
申请号 US20070689264 申请日期 2007.03.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HSU CHAO-SHUN;TANG CHEN-YAO;CHAO CLINTON;PENG MARK SHANE
分类号 H01L21/30 主分类号 H01L21/30
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