发明名称 |
Drahtbundverfahren auf Kupfer |
摘要 |
The specification describes techniques for wire bonding gold wires (78) to copper metallization (44) in semiconductor integrated circuits. A barrier layer (73) is formed on the copper, and an aluminum bonding pad (77) is formed on the barrier layer. Gold wire is then thermocompression bonded to the aluminum pad. <IMAGE> |
申请公布号 |
DE60039800(D1) |
申请公布日期 |
2008.09.25 |
申请号 |
DE2000639800 |
申请日期 |
2000.01.13 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
CHITTIPEDDI, SAILESH;MERCHANT, SAILESH MANSINH |
分类号 |
H01L21/60;H01L21/603;H01L23/485 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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