| 摘要 |
A method for forming a metal line of a semiconductor device is provided to prevent a conductive pattern from not opening by carrying out a first etching process for forming a via hole before forming a thin deposit layer. A method for forming a metal line of a semiconductor device includes the steps of: forming a second interlayer insulation layer(111) having a bit line(109) on a semiconductor substrate(101) with a gate line(107) and a first interlayer dielectric(105); forming a first dielectric layer(115) on the second interlayer dielectric; forming a via hole by etching the first dielectric layer and the second interlayer dielectric until part of the bit line is exposed; coating the whole surface of the resulting structure with a negative photoresist(119); exposing the first dielectric layer to bury a photoresist material in the via hole by carrying out a photolithography process; hardening the photoresist buried in the via hole by performing a O2 plasma treatment process on the whole surface of the resulting structure; depositing a second dielectric layer(121) on the whole surface including the first dielectric layer and the photoresist; forming a third interlayer dielectric (123) on the second dielectric layer; forming a trench(125) by etching the second dielectric layer and the third interlayer dielectric until the first dielectric layer is exposed; removing the photoresist by carrying out a washing process about the resulting structure; burying a metal material in the resulting structure to form the metal line.
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