SEMICONDUCTOR ETCH RESIDUE REMOVER AND CLEASNING COMPOSITIONS

摘要

A stripping composition for a semiconductor device is provided to remove etching residue from a semiconductor wafer while not adversely affecting the underlying substrate. A stripping composition for a semiconductor device is selected from an aqueous composition and a semi-aqueous composition comprising: (a) about 0.5-20% of an organic water soluble polyprotic carboxylic acid; (b) a metal-free base present in such a proportion that the base forms an effective buffering agent with the acid; (c) about 20-95% of water; (d) about 0-60% of a water miscible organic solvent; and (e) about 0.25-5% of a fluoride source.