发明名称 |
METHOD FOR MANUFACTURING THIN-FILM CRYSTAL, METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film crystal of a large domain having almost no domain border by a simple method, and to provide a method for manufacturing an organic thin-film transistor. SOLUTION: The method for manufacturing a thin-film crystal in a desired region on a substrate comprises a step for forming a first barrier layer touching the desired region on the substrate, a step for dripping a solution containing an organic semiconductor material into the desired region, and a step for drying the solution. These step are carried out in this order. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008227141(A) |
申请公布日期 |
2008.09.25 |
申请号 |
JP20070063246 |
申请日期 |
2007.03.13 |
申请人 |
KONICA MINOLTA HOLDINGS INC |
发明人 |
MORIMOTO TAKASHI;YAMADA JUN |
分类号 |
H01L21/368;H01L21/316;H01L21/336;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
H01L21/368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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