发明名称 METHOD FOR MANUFACTURING THIN-FILM CRYSTAL, METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film crystal of a large domain having almost no domain border by a simple method, and to provide a method for manufacturing an organic thin-film transistor. SOLUTION: The method for manufacturing a thin-film crystal in a desired region on a substrate comprises a step for forming a first barrier layer touching the desired region on the substrate, a step for dripping a solution containing an organic semiconductor material into the desired region, and a step for drying the solution. These step are carried out in this order. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008227141(A) 申请公布日期 2008.09.25
申请号 JP20070063246 申请日期 2007.03.13
申请人 KONICA MINOLTA HOLDINGS INC 发明人 MORIMOTO TAKASHI;YAMADA JUN
分类号 H01L21/368;H01L21/316;H01L21/336;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/368
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