| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to increase the output of optical current and reduce a variance of the output. SOLUTION: The optical sensor element with horizontal pin structure is provided with a p-type semiconductor area, an n-type semiconductor area, an i-type semiconductor area that is formed between the p-type semiconductor area and the n-type semiconductor area and whose impurity concentration is lower than those of the p-type semiconductor area and the n-type semiconductor area, an anode electrode to be connected to the p-type semiconductor area, and a cathode electrode to be connected to the n-type semiconductor area. When assuming that reverse bias voltage between the anode electrode and the cathode electrode is V<SB>d</SB>and reverse voltage V<SB>d</SB>is V<SB>1</SB>at a crossing point that is formed by a tangential line wherein I<SB>p</SB>-V<SB>d</SB>characteristic is V<SB>d</SB>=0 in a first area where the reverse bias voltage V<SB>d</SB>is smaller than saturated voltage and a straight line with I<SB>p</SB>-V<SB>d</SB>characteristic in a second area where the reverse voltage V<SB>d</SB>is larger than saturated voltage V<SB>sat</SB>, the reverse bias voltage V<SB>b</SB>that is applied for detecting the optical current satisfies an inequality of V<SB>1</SB><V<SB>b</SB><V<SB>sat</SB>. COPYRIGHT: (C)2008,JPO&INPIT
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