| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of performing a uniform thermal treatment in a semiconductor layer including impurities without increasing the number of processes and allowing metallic atoms to be excessively diffused into the semiconductor layer, and to provide a semiconductor device. SOLUTION: The method includes: a process for forming the semiconductor layer on a substrate; a process for forming a gate insulating film on the substrate including the semiconductor layer; a process for forming a gate electrode on the gate insulating film; a process for forming an inter-layer insulating film to cover the gate electrode; a process for injecting the impurities to the semiconductor layer with the gate electrode as a mask; a process for depositing an optical absorption film on the inter-layer insulating film; a process for irradiating the optical absorption film with light, and activating the impurities in the semiconductor layer with the heat generated by optical absorption; a process for forming an opening part which penetrates the optical absorption film and the inter-layer insulating film; a process for forming a conductive layer in the optical absorption film, so as to embed the opening; and a process for treating the conductive layer and the optical absorption film to have a pattern shape so as to form a wiring layer. COPYRIGHT: (C)2008,JPO&INPIT
|
