| 摘要 |
<p>A thin film transistor array substrate and a manufacturing method thereof are provided to conform peripheral edges of source and drain electrodes to a peripheral edge of an ohmic contact layer by exposing the channel portion through dry etch using source/drain conductive pattern group. A thin film transistor array substrate comprises a gate electrode(34), a gate insulation layer(41) an active layer(35), an ohmic contact layer(36), a source electrode(38), and a drain electrode. The gate electrode is formed on a substrate. The gate insulation layer is formed on the substrate to cover the gate electrode. The active layer overlaps with the gate electrode on the gate insulation layer. The ohmic contact layer is deposited on the active layer. The source electrode is formed on the ohmic contact layer and has a peripheral edge substantially conforming to a peripheral edge of the ohmic contact layer. The drain electrode faces the source electrode with a semiconductor channel portion having an exposed active region, and has a peripheral edge conforming to a peripheral edge of the ohmic contact layer. The drain electrode is formed on the ohmic contact layer. The source and drain electrodes includes copper.</p> |
