| 摘要 |
A method for evaluating bonded wafers is provided to accurately detect the number and size of island-like oxides by clarifying an outfit of the oxide by removing an active layer. A natural oxide(3) is removed from a surface of an active layer(2) of bonded wafers. The bonded wafer is etched by using an etching liquid, which etches the material of the wafer faster than the oxide, such that all of the active layer is removed. Island-like oxides, which are exposed during the etching process, are detected. The etching process is performed according to a relation, T <= X <= T+500 nm, where T is a thickness of the active layer and X is the etching depth.
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