发明名称 |
Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same |
摘要 |
<p>A readout gate electrode (13a) is selectively formed on a silicon substrate. An N-type drain region (14a) is formed at one end of the readout gate electrode (13a), and an N-type signal storage region (15) is formed at the other end thereof. A P+-type surface shield region (21a) is selectively epitaxial-grown on the signal storage region (15), and a silicide block layer (19) is formed on the surface shield region (21a) to cover at least part of the signal storage region (15). A Ti silicide film (33a) is selective epitaxial-grown on the drain region (14a).
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申请公布号 |
EP1139428(A3) |
申请公布日期 |
2008.09.10 |
申请号 |
EP20010104530 |
申请日期 |
2001.03.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NOZAKI, HIDETOSHI;INOUE, IKUKO;YAMASHITA, HIROSUMI |
分类号 |
H01L21/28;H01L27/146;H01L21/8238;H01L27/092;H01L29/41;H01L29/417;H04N5/335;H04N5/357;H04N5/369;H04N5/374 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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