| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an SOI substrate associating a silicon-based region with a GaAs-based material region, in a thin layer of the SOI substrate including a silicon support object supporting a dielectric layer and a silicon thin layer. <P>SOLUTION: This method includes a step for providing the SOI substrate including the silicon support object unconformable in angle of 2-10°and a silicon-based thin layer oriented in parallel to, for example, (001) surface; a step for saving at least one region of the silicon-based thin layer; a step for removing at least one unsaved region of a silicon thin layer, until the dielectric layer is exposed; a step for providing an opening part to the dielectric layer in the unsaved region, until the silicon support object is exposed; a step for growing a mismatched germanium on the dielectric layer exposed from the silicon of the support object exposed by the opening part by epitaxy; and a step for making a GaAs-based material grow from the obtained mismatched germanium. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
