| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that stably operates at high temperatures, and to provide a manufacturing method therefor. SOLUTION: A transistor 1, the semiconductor device, comprises: an n<SP>+</SP>-SiC layer 40 composed of a silicon carbide; and a p<SP>-</SP>-diamond layer 50 composed of diamond that is formed on the n<SP>+</SP>-SiC layer 40 to constitute a heterojunction between the p<SP>-</SP>-diamond layer 50 and the n<SP>+</SP>-SiC layer. The p<SP>-</SP>-diamond layer 50 is formed with openings 99 for removing a region where the nucleus of the diamond that constitutes the p<SP>-</SP>-diamond layer 50 is generated. COPYRIGHT: (C)2008,JPO&INPIT
|
