| 摘要 |
A method for manufacturing electronic devices on a semiconductor substrate with wide band gap that includes the steps of: forming a screening structure on the semiconductor substrate to include at least a dielectric layer that leaves a plurality of areas of the semiconductor substrate exposed, carrying out at least a ion implantation of a first type of dopant in the semiconductor substrate to form at least a first implanted region, carrying out at least a ion implantation of a second type of dopant in the semiconductor substrate to form at least a second implanted region inside the at least a first implanted region, carrying out an activation thermal process of the first type and second type of dopant with low thermal temperature suitable to complete the formation of the at least first and second implanted regions without diffusing the at least first and at least second type dopants in the substrate. |
