SEMICONDUCTOR DEVICE

摘要

This invention provides a phase change memory that can improve heat resistance during mounting through solder reflow treatment or during use in a high-temperature environment. The phase change memory comprises electrodes provided respectively on both sides of a recording layer which stores information by taking advantage of a resistance value change. The recording layer comprises a chalcogenide material comprising not less than 20 atomic% and not more than 38 atomic% of indium, not less than 9 atomic% and not more than 28 atomic% of germanium, not less than 3 atomic% and not more than 18 atomic% of antimony, and not less than 42 atomic% and not more than 63 atomic% of tellurium, wherein the germanium content is higher than the antimony content.