| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the safety of an electronic control device using a nonvolatile memory MRAM capable of easily performing high-speed read and write. <P>SOLUTION: In the electronic control device, a MRAM 120A to which a control program is written from an external tool 108 includes a writing circuit 122 with correction code, a decoding reading circuit 123, and error registers 125a and 125b to which error generation address numbers are written as error data. The MRAM performs abnormality report by performing duplicate abnormality determination if an error is still caused in confirmation read with a designated error generation address. A program memory area of the MRAM 120A is generally in a write protected state, and the protected state is released when the external tool 108 is connected. The error registers 125a and 125b are provided in a data memory area that does not become a write protected object. <P>COPYRIGHT: (C)2008,JPO&INPIT |
