| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element, of which the overall light-emitting efficiency can be improved, by increasing the effective area used for light emission among the light-emitting region, as a whole. <P>SOLUTION: The nitride semiconductor light-emitting element includes a substrate; a first conductivity-type nitride semiconductor layer 120 formed on the substrate; an active layer formed on the first conductivity-type nitride semiconductor layer 120; a second conductivity-type nitride semiconductor layer formed on the active layer; a transparent electrode 150 formed on the second conductivity-type nitride semiconductor layer; a second conductivity-type electrode pad 170a formed on the transparent electrode 150; a second conductivity-type electrode 170 formed into a linear shape and extending in one direction from the second conductivity-type electrode pad 170a; a first conductivity type electrode pad 160a, formed on the first conductivity-type nitride semiconductor layer adjacent to a side, near which the second conductivity-type electrode pad 170a is located; and a first conductivity-type electrode 160 formed into a linear shape and extending in the one direction from the first conductivity-type electrode pad 160a. <P>COPYRIGHT: (C)2008,JPO&INPIT |
