发明名称 LOW-TEMPERATURE JOINING MATERIAL AND JOINING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a joining material and a joining process that can achieve low-temperature joining during the joining stage in a mounting process, and to provide a semiconductor package in which no long term reliability is impaired even under a high temperature environment. <P>SOLUTION: In a joining material using metallic particles whose average grain size coated with an organic matter is≤100μm, the joining material is characterized in that one or more peaks are possessed in a grain-size distribution in the volume criterium of≤100 nm and≤100 nm-100μm respectively and that the carbon number of the organic component coating the metallic particles is 2-8. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008161907(A) 申请公布日期 2008.07.17
申请号 JP20060353649 申请日期 2006.12.28
申请人 HITACHI LTD 发明人 YASUDA TAKESUKE;MORITA TOSHIAKI;IDE HIDEKAZU;HOZOJI HIROYUKI;ISHII TOSHIAKI
分类号 B23K35/22;B22F1/00;B22F1/02;B22F9/24;B23K35/30;B23K35/40 主分类号 B23K35/22
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