| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a tunnel magnetism detection element that increases, particularly, a resistance change rate (ΔR/R). <P>SOLUTION: A free magnetic layer 6 is formed on an insulating barrier layer 5 made of Mg-O in the order of an enhancing layer 12, a first soft magnetic layer 13, a non-magnetic metal layer 14, and a second soft magnetic layer 15 from below. The enhancing layer 12 is formed of, for example, Co-Fe. The first soft magnetic layer 13 and the second soft magnetic layer 15 are formed of, for example, Ni-Fe. The non-magnetic metal layer 14 is formed of, for example, Ta. An average film thickness T2 of the first soft magnetic layer 13 is formed in the range of≥5Åto≤60Å. By this, it is possible to obtain a further stable and high resistance change rate (ΔR/R) compared with the conventional one. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
