SPIN TRANSISTOR USING LEAK MAGNETIC FIELD

摘要

PROBLEM TO BE SOLVED: To provide a transistor having a greatly high spin translation effect and capable of transmitting spin information to a charge without passing through a junction face of a semiconductor and a ferromagnetic material. SOLUTION: A semiconductor substrate portion having a channel layer; a first electrode and a second electrode arranged at separated positions with a predetermined space along an elongated direction of the channel on the substrate portion; source and drain consisting of ferromagnetic material and arranged at separated positions with predetermined space along the elongated direction of the channel between the first electrode and the second electrode; a gate formed on the substrate portion between the source and drain for adjusting the direction of spin of electron passing the channel are included. The spin of electron, which passes the channel layer is made aligned by the leak magnetic field of the source at a source lower portion and filtered by leak magnetic field of the drain at the drain lower portion. COPYRIGHT: (C)2008,JPO&INPIT