| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element capable of simply reducing a capacity component resulting from a gate electrode and capable of improving the conversion efficiency of signal charges, to provide a solid-state imaging apparatus, and to provide an imaging apparatus. SOLUTION: A source region 32 for a MOS transistor 28 is formed in an LDD structure with a first high-concentration diffusion layer 32a and a first low-concentration diffusion layer 32b, and a drain region 33 is formed in the LDD structure with a second low-concentration diffusion layer 33b and a second high-concentration diffusion layer 33a. The area of the second low-concentration diffusion layer 33b is made larger than that of the first low-concentration diffusion layer 32b, and a distance from the gate electrode 35 for the second high-concentration diffusion layer 33a is made larger than that from the gate electrode 35 for the first high-concentration diffusion layer 32a. COPYRIGHT: (C)2008,JPO&INPIT
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