| 摘要 |
The invention relates to a semiconductor device ( 10 ) with a semiconductor body ( 1 ) comprising a high-ohmic semiconductor substrate ( 2 ) which is covered with a dielectric layer ( 3 ) containing charges, on which dielectric layer one or more passive electronic components ( 4 ) comprising conductor tracks ( 4 ) are present, and at the location of the passive elements ( 4 ) a semiconductor region ( 5 ) is present at the interface between the semiconductor substrate ( 2 ) and the dielectric layer ( 3, 4 ), a first conductivity-type conducting channel induced in the semiconductor substrate ( 2 ) by the charges being interrupted by, and at the location of, the semiconductor region ( 5 ). According to the invention, the semiconductor region ( 5 ) is monocrystalline and of a second conductivity type, opposite to the first conductivity type. In this way the charge of an induced channel is locally compensated by the charge of the semiconductor regions ( 5 ). The device ( 10 ) has a very low high-frequency power loss, because the inversion channel is interrupted at the location of the semiconductor region ( 5 ). The device ( 10 ) further allows for a higher thermal budget and thus for the integration of active semiconductor elements ( 8 ) into the semiconductor body ( 1 ). Preferably, the semiconductor region ( 5 ) comprises a large number of strip-shaped sub-regions ( 5 A, 5 B, 5 C).
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