发明名称 Making a semiconductor device using a highly conductive composition for wafer coating
摘要 <p>A conductive composition for coating a semiconductor wafer comprises conductive filler that has an average particle size of less than 2 microns and a maximum particle size of less than 10 microns, a first resin that has a softening point between 80-260°C, solvent, curing agent, and a second resin, wherein at room temperature the first resin is substantially soluble in the solvent.</p>
申请公布号 EP1944797(A1) 申请公布日期 2008.07.16
申请号 EP20080000370 申请日期 2008.01.10
申请人 NATIONAL STARCH AND CHEMICAL INVESTMENT HOLDING CORPORATION 发明人 ZHUO, QIZHUO
分类号 H01L21/60;C09J5/02;C09J5/06;H01L23/482 主分类号 H01L21/60
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