METHOD OF DEPOSITING RUTHENIUM FILM USING RUTHENIUM TETROXIDE

摘要

A method for depositing a ruthenium layer using R2O4 is provided to form rapidly the ruthenium layer having high step coverage on a surface having a large aspect ratio. A loading process is performed to load a substrate into a chemical vapor deposition reactor(100). A first supplying process is performed to supply a ruthenium organic metal compound to the chemical vapor deposition reactor(110). A second supplying process is performed to supply inert gas to the chemical vapor deposition reactor(120). A third supplying process is performed to supply R2O4 to the chemical vapor deposition reactor(130). A fourth supplying process is performed to supply the inert gas to the chemical vapor deposition reactor(140).