SEMICONDUCTOR DEVICE AND METHOD OF FORMING THEREOF

摘要

A semiconductor device and a forming method thereof are provided to improve current characteristics by growing vertically and uniformly a carbon nano-material. A first interlayer dielectric(110) having a trench is formed on a substrate(100). A lower conductive pattern(120) is provided within the trench. A catalytic metal layer(134) is provided on the lower conductive pattern within the trench. A second interlayer dielectric(140) is formed on the first interlayer dielectric. The second interlayer dielectric includes an opening for exposing the catalytic metal layer. A carbon nano-material is provided in the opening and is grown from the catalytic metal layer. The lower conductive pattern includes copper. A first barrier layer(122) is formed between the lower conductive pattern and the catalytic metal layer in order to prevent the migration of the copper.