| 摘要 |
A method of producing a thin film transistor substrate to prevent an interconnection from being corroded during a dry etching process includes sequentially forming on an insulating substrate a gate interconnection, a gate insulating layer, an active layer, a conductive layer for a data interconnection, and a photoresist pattern including a first region and a second region, etching the conductive layer for the data interconnection using the photoresist pattern as an etching mask to form a conductive layer pattern for source/drain electrodes, etching the active layer using the photoresist pattern as the etching mask to form an active layer pattern, removing the second region of the photoresist pattern, dry etching the conductive layer pattern for the source/drain electrodes under the second region using the photoresist pattern as the etching mask and etching gas, etching a portion of the active layer pattern using the photoresist pattern as the etching mask, and physically removing the reaction byproduct using a reaction byproduct removal agent so that external force is applied to the etching gas and the reaction byproduct of the conductive layer pattern for the source/drain electrodes.
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