| 摘要 |
The invention relates to a semiconductor device ( 10 ) having a semiconductor body ( 2 ), comprising a field effect transistor, a first gate dielectric ( 6 A) being formed on a first surface at the location of the channel region ( 5 ) and on it a first gate electrode ( 7 ), a sunken ion implantation ( 20 ) being executed from the first side of the semiconductor body ( 2 ) through and on both sides of the first gate electrode ( 7 ), which implantation results in a change of property of the silicon below the first gate electrode ( 7 ) compared to the silicon on both sides of the gate electrode ( 7 ) in a section of the channel region ( 5 ) remote from the first gate dielectric ( 6 A), and on the second surface of the semiconductor body ( 2 ) a cavity ( 30 ) being provided therein by means of selective etching while use is made of the change of property of the silicon. A second gate ( 6 B, 8 ) is deposited in the cavity thus formed. Before the ion implantation ( 20 ), a mask (M 1 ) is formed on both sides of the gate electrode ( 7 ) and at a distance thereof, whereby after the ion implantation ( 20 ) at the location of the mask (M 1 ) also a change in property of the silicon is obtained. In this way the device ( 10 ) can be easily provided with lateral insulation regions. Also the end regions of the gate electrodes ( 7,8 ) can in this way be surrounded by insulation regions.
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