| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to improve sensitivity by differently forming the thickness of a silicon film according to each color filter. CONSTITUTION: A first interlayer insulation layer(20a) is selectively etched on a photo diode area. A silicon layer(24) is formed by gap-filling the etched part of the first interlayer dielectric layer. A plurality of interlayer dielectric layers, metal wirings(26a,26b), and contact plugs(22a,22b) are formed on the firs interlayer dielectric layer. The silicon layers with different thickness are left on blue, green, and red regions by selectively etching the first interlayer dielectric layer, the silicon layer, and the plurality of interlayer dielectric layer.
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