METHOD OF FORMING WAFER MARK BY USING ION IMPLANTATION

摘要

PURPOSE: A method for forming a wafer mark through an ion implantation process is provided to improve yields by reducing particles due to a laser marking by discriminating a wafer by diffused reflection. CONSTITUTION: A wafer mark is patterned using a photoresist through a photolithography process. An ion is implanted to the patterned wafer mark. The photoresist has the thickness of 5 to 7 um.