发明名称 ORGANIC THIN FILM TRANSISTOR
摘要 <p>In an organic thin film transistor, at least three terminals of a gate electrode, a source electrode and a drain electrode, and an insulator layer and an organic semiconductor layer are arranged on a substrate, and a current between a source and a drain is controlled by applying a voltage to the gate electrode. The organic thin film transistor has a channel control layer, which contains an amorphous organic compound having an ionization potential of less than 5.8eV, between the organic semiconductor layer and the insulator layer. The organic thin film transistor has excellent stability in field effect mobility even when stored at a high temperature, and also has a high response speed.</p>
申请公布号 KR20100057074(A) 申请公布日期 2010.05.28
申请号 KR20107006448 申请日期 2008.09.09
申请人 IDEMITSU KOSAN CO., LTD. 发明人 NAKAMURA HIROAKI;NAKANO YUKI;SAITO MASATOSHI;KONDO HIROFUMI
分类号 H01L29/786;H01L51/05 主分类号 H01L29/786
代理机构 代理人
主权项
地址
您可能感兴趣的专利