发明名称 |
BICMOS DEVICE USING STANDARD CMOS PROCESS AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PURPOSE: A BiCMOS element and a manufacturing method thereof are provided to manufacture an emitter, a base, and a collector through a standard complementary metal oxide semiconductor process by injecting different kind and concentration of an impurity into a polysilicon pattern of a thin film. CONSTITUTION: An element isolation film(110) is formed on a preset part of a semiconductor substrate(100) for limiting an active area(A). The active area comprises a first MOS transistor area(MOS1) and a second MOS transistor area(MOS2). An emitter is formed on one side of a semiconductor pattern. A collector is formed on the other side of the semiconductor pattern. The emitter and collector have a first conductivity type impurity.
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申请公布号 |
KR20100056593(A) |
申请公布日期 |
2010.05.28 |
申请号 |
KR20080115467 |
申请日期 |
2008.11.20 |
申请人 |
CHUNGBUK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
发明人 |
NA, KEE YEOL;CHOI, MOON HO;KIM, YEONG SEUK;BAEK, KI JU |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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