发明名称 |
THERMOELECTRIC SENSOR USING GE MATERIAL |
摘要 |
PURPOSE: A thermoelectric sensor using a GE-based thermoelectric material is provided to lower heat conductivity, resistance, and high-sensitivity noise. CONSTITUTION: A thermoelectric sensor using a GE-based thermoelectric material comprises substrates(10) and film type thermopiles. The film type thermopiles are formed on the top surface of the substrates. The thermopile is composed of a semiconductor thermocouple which has germanium. When the thermocouple is formed, a p-type semiconductor and an n-type semiconductor are welded. The p-type semiconductor is formed by doping Ga in the germanium. The n-type semiconductor is formed by doping As in the germanium.
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申请公布号 |
KR20100030762(A) |
申请公布日期 |
2010.03.19 |
申请号 |
KR20080089635 |
申请日期 |
2008.09.11 |
申请人 |
KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE |
发明人 |
OH, MIN WOOK;LEE, HEE WOONG;KIM, BONG SEO;PARK, SU DONG |
分类号 |
G01K7/02;G01K7/00 |
主分类号 |
G01K7/02 |
代理机构 |
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