METHOD OF CRYSTALLIZING AMORPHOUS SILICON AND METHOD OF FABRICATING THIN FILM TRANSISTOR USING THEREOF
摘要
PURPOSE: A method for crystallizing amorphous silicon and the method for manufacturing a thin film transistor using the same are provided to crystallize a silicon thin film through local heat using thermite. CONSTITUTION: An amorphous silicon layer is formed on a substrate(10). A dielectric layer(31) is formed on the amorphous silicon layer. A metal layer(33) is formed on the dielectric layer. A thermite is formed on the metal layer. The amorphous silicon layer is crystallized by reacting with the thermite by heating the substrate.
申请公布号
KR20100030975(A)
申请公布日期
2010.03.19
申请号
KR20080089975
申请日期
2008.09.11
申请人
SAMSUNG ELECTRONICS CO., LTD.;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY